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| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-80SL Preliminary TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-30 dBc at Pout= 42.0dBm Single Carrier Level HIGH POWER P1dB=49.0dBm at 5.9GHz to 6.4GHz HIGH GAIN G1dB=7.0dB at 5.9GHz to 6.4GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB G1dB IDS1 G ( Ta= 25C ) UNIT dBm dB A dB % dBc A C MIN. 48.0 6.0 -25 TYP. MAX. 49.0 7.0 18.0 35 -30 20.0 0.8 16.0 100 CONDITIONS VDS= 10V IDSset=10.0A f = 5.9 to 6.4GHz add IM3 IDS2 Tch Two-Tone Test Po=42.0dBm (Single Carrier Level) (VDS X IDS +Pin-P1dB) X Rth(c-c) Recommended Gate Resistance(Rg) : 28 (Max.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS VGSO Rth(c-c) ( Ta= 25C ) UNIT S V A V C/W MIN. -1.0 -5 TYP. 20 -1.8 38 0.5 MAX. -3.0 0.6 CONDITIONS VDS= 3V IDS= 12.0A VDS= 3V IDS= 200mA VDS= 3V VGS= 0V IGS= -1.0mA Channel to Case The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Aug. 2006 TIM5964-80SL ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage Temperature ( Ta= 25C ) SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 26 250 175 -65 to +175 PACKAGE OUTLINE (7-AA02C) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM5964-80SL RF PERFORMANCE Output Power (Pout) vs. Frequency Pout(dBm) VDS=10V 51 IDSset10.0A Pin=42.0dBm 50 49 48 5.8 5.9 6.0 6.1 6.2 6.3 6.4 6.5 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) 52 freq.=6.4GHz 51 50 49 VDS=10V IDSset10.0A 90 80 Pout 70 60 50 Pout(dBm) 48 47 46 45 44 43 36 38 40 42 44 46 add 40 30 20 Pin(dBm) 3 add(%) TIM5964-80SL Power Dissipation(PT) vs. Case Temperature(Tc) 250 200 PT(W) 100 0 0 40 80 120 160 200 Tc( C ) IM3 vs. Power Characteristics 0 VDS=10V IDSset10.0A -10 freq.=6.4GHz f=5MHz -20 IM3(dBc) -30 -40 -50 38 40 42 44 46 48 Pout(dBm) @Single carrier level 4 |
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